Optimal basis sets for deep levels. II: Defect-molecule approximationKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2260-2265, issn 0163-1829Article

Chemical trends for native defects in III-V―compounds semiconductorsPÖTZ, W; FERRY, D. K.Physical review. B, Condensed matter. 1985, Vol 31, Num 2, pp 968-973, issn 0163-1829Article

Particularités du recuit des bilacunes dans le silicium contenant des régions desordonnéesANTONOVA, I.V; VASIL'EV, A.V; PANOV, V.I et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1076-1079, issn 0015-3222Article

Evidence for two energy levels associated with EL2 trap in GaAsWOSINSKI, T.Applied physics. A, Solids and surfaces. 1985, Vol 36, Num 4, pp 213-216, issn 0721-7250Article

Electronic structure of a single neutral ideal phosphorus vacancy in GaPMAKIUCHI, N; LEITE, J. R; FAZZIO, A et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 19, pp 3423-3428, issn 0022-3719Article

Excitation spectroscopy on the 0.79-eV (C) line defect in irradiated siliconWAGNER, J; THONKE, K; SAUER, R et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 12, pp 7051-7053, issn 0163-1829Article

Optimal basis sets for deep levels. I: Potential representations and chemical trendsKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2254-2259, issn 0163-1829Article

Optimization and preservation of deep-level transient spectroscopy signal responseTHOMAS, H.Journal of applied physics. 1985, Vol 57, Num 10, pp 4619-4622, issn 0021-8979Article

An analysis of the classical arguments concerning forecasts for the Z₁ centre formation in alkali halidesBOSI, L; NIMIS, M.Physica status solidi. B. Basic research. 1985, Vol 131, Num 2, pp K111-K116, issn 0370-1972Article

A new method for the characterization of traps in luminescent materialsNAKAZAWA, E.Japanese journal of applied physics. 1984, Vol 23, Num 9, pp L755-L757, issn 0021-4922, 2Article

Analysis of hyperfine interactions in alkaline-earth oxidesBAS, R.Physical review. B, Condensed matter. 1984, Vol 30, Num 9, pp 5334-5335, issn 0163-1829Article

Theory of electron spin resonance measurements of chalcogen pairs in SiSANKEY, O. F; DOW, J. D.Solid state communications. 1984, Vol 51, Num 9, pp 705-708, issn 0038-1098Article

Calcul du spectre d'énergie du cristal de silicium contenant des lacunes par une méthode semi-empirique dans le cadre des représentations d'orbitales moléculairesVERNER, V. D; NICHUGOVSKIJ, D. K; FOMINYKH, S. V et al.Fizika tverdogo tela. 1983, Vol 25, Num 10, pp 3009-3011, issn 0367-3294Article

Cluster-Bethe-lattice approach to the electronic structure of a twofold coordinated silicon atom as a new intrinsic defect in v-SiO₂BETHKENHAGEN, V; HÜBNER, K.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp K71-K76, issn 0370-1972Article

Caractérisation électrique d'hétérostructures et de couches minces semiconductrices par effet Hall. I: Superréseaux GaAs/AlAs. II: Silicium sur isolant = Electrical characterization of semiconductivity heterostructures and thin films using Hall effect. I: GaAs/AlAs. II: Silicon on insulatorJeanjean, Philippe; Robert, J. L.1992, 170 p.Thesis

Defect calculations in semiconductors theoretical principles as illustrated by current calculationsSTONEHAM, A. M.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 51, Num 2, pp 161-176, issn 0141-8637Article

Tetrahedral-site VS hexagonal-site self-interstitial in siliconBOGUSLAWSKI, P; PAPP, G; BALDERESCHI, A et al.Solid state communications. 1984, Vol 52, Num 2, pp 155-158, issn 0038-1098Article

Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionSAUTREUIL, B; VIKTOROVITCH, P; BLANCHET, R et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2322-2324, issn 0021-8979Article

Comparison of an extended interstitial with a split interstitial in siliconWESSER, K; SAHU, S. N; KARINS, J. P et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 157-161, issn 0370-1972Article

Comment on atomic model for the EL2 defect in GaAsMANASREH, M. O.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2722-2723, issn 0163-1829Article

An inadvertent mid-gap electron level in liquid-phase-epitaxial GaPZAFAR IQBAL, M; JABBAR, A; BABER, N et al.Physica status solidi. A. Applied research. 1987, Vol 99, Num 1, pp K65-K68, issn 0031-8965Article

Neutron-induced trapping levels in aluminum gallium arsenideBARNES, C. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 95-118, issn 0361-5235Article

Distorsion de la structure électronique des complexes lacunes-ions par les atomes de gaz rares dans le siliciumMUDRYJ, A. V; PUSHKARCHUK, A. L; UL'YASHIN, A. G et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 2, pp 360-363, issn 0015-3222Article

Accurate evaluations of thermally stimulated current curves and defect parameters for CdTe crystalsELKOMOSS, S. G; SAMIMI, M; HAGE-ALI, M et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5313-5319, issn 0021-8979Article

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article